IRFD123 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFD123
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1.3 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: HEXDIP
IRFD123 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD123 Datasheet (PDF)
1.1. irfd123_sihfd123.pdf 
Size:1752K _update
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT • End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 • 175 °C Operating Temperature Configuration Single • Fast Switching D • Ease of Par
1.2. irfd123.pdf Size:276K _international_rectifier
PD - 97015 IRFD123 06/09/05 Document Number: 90161 www.vishay.com 1 IRFD123 Document Number: 90161 www.vishay.com 2 IRFD123 Document Number: 90161 www.vishay.com 3 IRFD123 Document Number: 90161 www.vishay.com 4 IRFD123 Document Number: 90161 www.vishay.com 5 IRFD123 Document Number: 90161 www.vishay.com 6 IRFD123 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout
1.3. irfd123_sihfd123.pdf Size:1830K _vishay
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT • End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 • 175 °C Operating Temperature Configuration Single • Fast Switching D • Ease of Paralleling • Complian
Datasheet: RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , 2N5484 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 .
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