PHD55N03LTA Todos los transistores

 ..1. Size:110K  philips
 php55n03lta phb55n03lta phd55n03lta.pdf

PHP55N03LTA;PHB55N03LTA; PHD55N03LTA N-channel enhancement mode field-effect transistor Rev. 02 2 August 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). 2. Features Low

 4.1. Size:109K  philips
 phb55n03lt phd55n03lt php55n03lt 6.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V) g RDS(ON) 18 m (VGS

 6.1. Size:262K  inchange semiconductor
 phd55n03.pdf

Isc N-Channel MOSFET Transistor PHD55N03 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta