All MOSFET. PHD55N03LTA Datasheet

 

PHD55N03LTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHD55N03LTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DPAK

 PHD55N03LTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD55N03LTA Datasheet (PDF)

 ..1. Size:110K  philips
 php55n03lta phb55n03lta phd55n03lta.pdf

PHD55N03LTA PHD55N03LTA

PHP55N03LTA;PHB55N03LTA;PHD55N03LTAN-channel enhancement mode field-effect transistorRev. 02 2 August 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP55N03LTA in a SOT78 (TO-220AB)PHB55N03LTA in a SOT404 (D2-PAK)PHD55N03LTA in a SOT428 (D-PAK).2. Features Low

 4.1. Size:109K  philips
 phb55n03lt phd55n03lt php55n03lt 6.pdf

PHD55N03LTA PHD55N03LTA

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V)gRDS(ON) 18 m (VGS

 6.1. Size:262K  inchange semiconductor
 phd55n03.pdf

PHD55N03LTA PHD55N03LTA

Isc N-Channel MOSFET Transistor PHD55N03FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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