PHD55N03LTA Datasheet and Replacement
Type Designator: PHD55N03LTA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DPAK
PHD55N03LTA substitution
PHD55N03LTA Datasheet (PDF)
php55n03lta phb55n03lta phd55n03lta.pdf

PHP55N03LTA;PHB55N03LTA;PHD55N03LTAN-channel enhancement mode field-effect transistorRev. 02 2 August 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP55N03LTA in a SOT78 (TO-220AB)PHB55N03LTA in a SOT404 (D2-PAK)PHD55N03LTA in a SOT428 (D-PAK).2. Features Low
phb55n03lt phd55n03lt php55n03lt 6.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V)gRDS(ON) 18 m (VGS
phd55n03.pdf

Isc N-Channel MOSFET Transistor PHD55N03FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Datasheet: JCS4N65V , LSK389 , MDV1528 , ME60N03 , ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , SKD502T , PHP55N03LTA , QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M .
History: FTP11N08A
Keywords - PHD55N03LTA MOSFET datasheet
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History: FTP11N08A



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