2SK641 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK641

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 55 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO3P

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2SK641 Datasheet (PDF)

1.1. 2sk641 2sk642.pdf Size:49K _update

1.2. 2sk641.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor 2SK641 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

5.1. 2sk644.pdf Size:155K _update

查询"2SK644"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK644"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK644"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK644"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003

5.2. 2sk646.pdf Size:38K _update

5.3. 2sk643.pdf Size:63K _update

5.4. 2sk644.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK644 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed,high Current Switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER

5.5. 2sk642.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor 2SK642 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable f

5.6. 2sk643.pdf Size:230K _update-mosfet

isc N-Channel MOSFET Transistor 2SK643 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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