2SK641 Datasheet and Replacement
Type Designator: 2SK641
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3P
2SK641 substitution
2SK641 Datasheet (PDF)
2sk641.pdf

isc N-Channel MOSFET Transistor 2SK641DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
2sk643.pdf

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Datasheet: FMH23N50E , FMV23N50E , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , STP65NF06 , 2SK642 , HBS170 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 .
Keywords - 2SK641 MOSFET datasheet
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