HFP17N10 Todos los transistores

 

HFP17N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP17N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 55 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9.3 nS

Conductancia de drenaje-sustrato (Cd): 240 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO220

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HFP17N10 Datasheet (PDF)

1.1. hfp17n10.pdf Size:1178K _shantou-huashan

HFP17N10
HFP17N10

Shantou Huashan Electronic Devices Co.,Ltd. HFP17N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

4.1. sihfp17n50l.pdf Size:181K _upd-mosfet

HFP17N10
HFP17N10

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.28 RoHS* • Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 • Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg

4.2. irfp17n50l sihfp17n50l.pdf Size:176K _vishay

HFP17N10
HFP17N10

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) (?)VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Ruggedness Co

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