HFP17N10 Datasheet and Replacement
Type Designator: HFP17N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO220
HFP17N10 substitution
HFP17N10 Datasheet (PDF)
hfp17n10.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP17N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc
irfp17n50l sihfp17n50l.pdf

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg
irfp17n50l irfp17n50lpbf sihfp17n50l.pdf

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg
Datasheet: HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 , HFP13N10 , HFP13N50 , HFP15N06 , IRFZ44N , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 , HFP4N65 , HFP50N06 , HFP50N06V , HFP5N80 .
History: VB3222 | IPD95R1K2P7 | 2SJ126
Keywords - HFP17N10 MOSFET datasheet
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History: VB3222 | IPD95R1K2P7 | 2SJ126



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