2SK3607-01MR
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3607-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 200
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 18
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.6
nS
Cossⓘ - Capacitancia
de salida: 110
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17
Ohm
Paquete / Cubierta:
TO220F
- Selección de transistores por parámetros
2SK3607-01MR
Datasheet (PDF)
..1. Size:105K fuji
2sk3607-01mr.pdf 
2SK3607-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
..2. Size:279K inchange semiconductor
2sk3607-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3607-01MRFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.1. Size:68K renesas
2sk360.pdf
2SK360 Silicon N-Channel MOS FET REJ03G0811-0200 (Previous ADE-208-1170) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 1. Gate32. Drain3. Source12Rev.2.00, Aug 10.2005, page 1 of 5 2SK360 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSX*1 20 VG
8.2. Size:97K fuji
2sk3601-01.pdf
2SK3601-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicFoot Print PatternAbsolute maximum ratings
8.3. Size:255K fuji
2sk3608-01l-s-sj.pdf
2SK3608-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.4. Size:101K fuji
2sk3606-01.pdf
2SK3606-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.5. Size:105K fuji
2sk3609-01.pdf
2SK3609-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsFoot Print Pattern(
8.6. Size:102K fuji
2sk3603-01mr.pdf
2SK3603-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.7. Size:103K fuji
2sk3605-01.pdf
2SK3605-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings Foot Print Pattern (
8.8. Size:247K fuji
2sk3600-01l-s-sj.pdf
2SK3600-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.9. Size:253K fuji
2sk3604-01l-s-sj.pdf
2SK3604-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.10. Size:99K fuji
2sk3602-01.pdf
2SK3602-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.11. Size:282K inchange semiconductor
2sk3608l.pdf
isc N-Channel MOSFET Transistor 2SK3608LFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.12. Size:357K inchange semiconductor
2sk3604s.pdf
isc N-Channel MOSFET Transistor 2SK3604SFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.13. Size:288K inchange semiconductor
2sk3606-01.pdf
isc N-Channel MOSFET Transistor 2SK3606-01FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.14. Size:356K inchange semiconductor
2sk3600s.pdf
isc N-Channel MOSFET Transistor 2SK3600SFEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.15. Size:280K inchange semiconductor
2sk3603-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3603-01MRFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.16. Size:356K inchange semiconductor
2sk3608s.pdf
isc N-Channel MOSFET Transistor 2SK3608SFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.17. Size:282K inchange semiconductor
2sk3600l.pdf
isc N-Channel MOSFET Transistor 2SK3600LFEATURESDrain Current : I = 29A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.18. Size:283K inchange semiconductor
2sk3604l.pdf
isc N-Channel MOSFET Transistor 2SK3604LFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.19. Size:289K inchange semiconductor
2sk3602-01.pdf
isc N-Channel MOSFET Transistor 2SK3602-01FEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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History: STH12N60
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