2SK3607-01MR PDF and Equivalents Search

 

2SK3607-01MR Specs and Replacement

Type Designator: 2SK3607-01MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO220F

2SK3607-01MR substitution

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2SK3607-01MR datasheet

 ..1. Size:105K  fuji
2sk3607-01mr.pdf pdf_icon

2SK3607-01MR

2SK3607-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un... See More ⇒

 ..2. Size:279K  inchange semiconductor
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2SK3607-01MR

isc N-Channel MOSFET Transistor 2SK3607-01MR FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

 8.1. Size:68K  renesas
2sk360.pdf pdf_icon

2SK3607-01MR

2SK360 Silicon N-Channel MOS FET REJ03G0811-0200 (Previous ADE-208-1170) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Gate 3 2. Drain 3. Source 1 2 Rev.2.00, Aug 10.2005, page 1 of 5 2SK360 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSX*1 20 V G... See More ⇒

 8.2. Size:97K  fuji
2sk3601-01.pdf pdf_icon

2SK3607-01MR

2SK3601-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings ... See More ⇒

Detailed specifications: HFP840, HFR1N60, HFU1N60, HFU2N60, HFU70N03V, 2SJ655, 2SK2056, 2SK2617ALS, 2SK3878, AO4472, AON6324, SD2932, STK1820F, STP55NE06, STP55NE06FP, SUD50N024-06P, SVF7N65T

Keywords - 2SK3607-01MR MOSFET specs

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