AOD410 Todos los transistores

 ..1. Size:238K  aosemi
 aod410.pdf

AOD410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 8A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 ..2. Size:841K  cn vbsemi
 aod410.pdf

AOD410 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLUT

 0.1. Size:291K  aosemi
 aod4102.pdf

AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19A low gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)

 0.2. Size:116K  aosemi
 aod4100.pdf

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4100 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V) body diode characteristics. This device is ideally suite RDS(ON)

 0.3. Size:114K  aosemi
 aod4104.pdf

AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4104 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), shoot-through immunity and ID = 75A (VGS = 10V) body diode characteristics. This device is ideally suite RDS(ON)

 0.4. Size:138K  aosemi
 aod4106.pdf

AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4106 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), low gate charge.This device is ID = 50A (VGS = 20V) suitable for use as a low side switch in SMPS and RDS(ON)

 0.5. Size:265K  inchange semiconductor
 aod4102.pdf

isc N-Channel MOSFET Transistor AOD4102 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =37m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a