AOD410 Datasheet and Replacement
Type Designator: AOD410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.7 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO252
AOD410 substitution
AOD410 Datasheet (PDF)
aod410.pdf

AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
aod410.pdf

AOD410www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT
aod4102.pdf

AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
aod4100.pdf

AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)
Datasheet: AO8806 , AO8816 , AO8842 , AOD400 , AOD402 , AOD404 , AOD406 , AOD408 , STF13NM60N , AOB10N60L , AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L .
Keywords - AOD410 MOSFET datasheet
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History: SIF5N40D | MS10N80



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