AOB25S65L Todos los transistores

 

AOB25S65L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB25S65L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 87 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO263

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AOB25S65L datasheet

 ..1. Size:312K  aosemi
 aob25s65l.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.1. Size:311K  aosemi
 aob25s65.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.2. Size:311K  aosemi
 aot25s65 aob25s65 aotf25s65.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.3. Size:253K  inchange semiconductor
 aob25s65.pdf pdf_icon

AOB25S65L

isc N-Channel MOSFET Transistor AOB25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

MOSTRAR MÁS

Otros transistores... AOD410 , AOB10N60L , AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AO3400A , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 .

History: AUIRF7103Q | STF15N60M2-EP | 2SK4080-ZK-E2-AY | WMM07N65C4 | WML08N60C4 | IRF7473TRPBF | STD40NF10

 

 

 

 

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