AOB25S65L MOSFET. Datasheet pdf. Equivalent

AOB25S65L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOB25S65L Datasheet (PDF)

1.1. aob25s65l.pdf Size:312K _aosemi

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi

2.1. aob25s65.pdf Size:311K _aosemi

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi

 5.1. aob254l.pdf Size:306K _aosemi

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 46mΩ conduction and switching power losses are minimized RDS(ON) (at VGS =4.5V) < 53mΩ due to an extre

5.2. aob2502l.pdf Size:334K _aosemi

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 150V • Low RDS(ON) ID (at VGS=10V) 106A • Low Gate Charge RDS(ON) (at VGS=10V) < 11mΩ (10.7mΩ*) • Optimized for fast-switching applications Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Indust

 5.3. aob256l.pdf Size:287K _aosemi

AOB256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 19A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 85mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 100mΩ extremely low combina

5.4. aob2500l.pdf Size:297K _aosemi

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.6mΩ (<7.3mΩ∗) conduction and switching power losse

LIST

Last Update

MOSFET: SPB100N06S2L-05 | SPP100N06S2L-05 | SPB80N06S2L-H5 | SPP80N06S2L-H5 | SPB80N06S2L-09 | SPP80N06S2L-09 | SPB80N06S2L-07 | SPP80N06S2L-07 | SPB80N06S2-05 | SPP80N06S2-05 | SPN02N60C3 | SPD50N06S2-14 | SPD22N08S2L-50 | KIA2806A | BR80N08A |