AOB25S65L - описание и поиск аналогов

 

AOB25S65L. Аналоги и основные параметры

Наименование производителя: AOB25S65L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 357 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 87 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO263

Аналог (замена) для AOB25S65L

- подборⓘ MOSFET транзистора по параметрам

 

AOB25S65L даташит

 ..1. Size:312K  aosemi
 aob25s65l.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.1. Size:311K  aosemi
 aob25s65.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.2. Size:311K  aosemi
 aot25s65 aob25s65 aotf25s65.pdf pdf_icon

AOB25S65L

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 6.3. Size:253K  inchange semiconductor
 aob25s65.pdf pdf_icon

AOB25S65L

isc N-Channel MOSFET Transistor AOB25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOD410 , AOB10N60L , AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AO3400A , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 .

History: IRF8736TR | WMK05N105C2

 

 

 

 

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