AOB4S60L Todos los transistores

 ..1. Size:296K  aosemi
 aob4s60l.pdf

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.1. Size:296K  aosemi
 aot4s60 aob4s60 aotf4s60.pdf

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.2. Size:296K  aosemi
 aob4s60.pdf

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.3. Size:255K  inchange semiconductor
 aob4s60.pdf

isc N-Channel MOSFET Transistor AOB4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a