AOB4S60L PDF and Equivalents Search

 

AOB4S60L Specs and Replacement

Type Designator: AOB4S60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO263

AOB4S60L substitution

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AOB4S60L datasheet

 ..1. Size:296K  aosemi
 aob4s60l.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

 7.1. Size:296K  aosemi
 aot4s60 aob4s60 aotf4s60.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

 7.2. Size:296K  aosemi
 aob4s60.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

 7.3. Size:255K  inchange semiconductor
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AOB4S60L

isc N-Channel MOSFET Transistor AOB4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

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Detailed specifications: AOB15S60L, AOB15S65L, AOB20S60L, AOB25S65L, AOB270L, AOB27S60L, AOB418, AOB482, IRFZ48N, AOB7S60L, AOB7S65L, AOD4100, AOD4104, AOD4106, AOD4110, AOD4112, AOI1N60L

Keywords - AOB4S60L MOSFET specs

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