AOB4S60L - описание и поиск аналогов

 

AOB4S60L. Аналоги и основные параметры

Наименование производителя: AOB4S60L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 21 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO263

Аналог (замена) для AOB4S60L

- подборⓘ MOSFET транзистора по параметрам

 

AOB4S60L даташит

 ..1. Size:296K  aosemi
 aob4s60l.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.1. Size:296K  aosemi
 aot4s60 aob4s60 aotf4s60.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.2. Size:296K  aosemi
 aob4s60.pdf pdf_icon

AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 7.3. Size:255K  inchange semiconductor
 aob4s60.pdf pdf_icon

AOB4S60L

isc N-Channel MOSFET Transistor AOB4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 , AOB482 , IRFZ48N , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , AOI1N60L .

History: 2SK580L | IRF8714G

 

 

 

 

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