AOD4106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD4106
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 642 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AOD4106

AOD4106 Datasheet (PDF)

..1. Size:138K aosemi
aod4106.pdf

AOD4106N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4106 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), low gate charge.This device is ID = 50A (VGS = 20V)suitable for use as a low side switch in SMPS and RDS(ON)

8.1. Size:238K aosemi
aod410.pdf

AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

8.2. Size:291K aosemi
aod4102.pdf

AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)

8.3. Size:116K aosemi
aod4100.pdf

AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)

8.4. Size:114K aosemi
aod4104.pdf

AOD4104N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4104 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 75A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)

8.5. Size:841K cn vbsemi
aod410.pdf

AOD410www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT

8.6. Size:265K inchange semiconductor
aod4102.pdf

isc N-Channel MOSFET Transistor AOD4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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History: 2SK1067

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