Справочник MOSFET. AOD4106

 

AOD4106 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD4106
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 642 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AOD4106

 

 

AOD4106 Datasheet (PDF)

 ..1. Size:138K  aosemi
 aod4106.pdf

AOD4106 AOD4106

AOD4106N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4106 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), low gate charge.This device is ID = 50A (VGS = 20V)suitable for use as a low side switch in SMPS and RDS(ON)

 8.1. Size:238K  aosemi
 aod410.pdf

AOD4106 AOD4106

AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

 8.2. Size:291K  aosemi
 aod4102.pdf

AOD4106 AOD4106

AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)

 8.3. Size:116K  aosemi
 aod4100.pdf

AOD4106 AOD4106

AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)

 8.4. Size:114K  aosemi
 aod4104.pdf

AOD4106 AOD4106

AOD4104N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4104 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 75A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)

 8.5. Size:841K  cn vbsemi
 aod410.pdf

AOD4106 AOD4106

AOD410www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT

 8.6. Size:265K  inchange semiconductor
 aod4102.pdf

AOD4106 AOD4106

isc N-Channel MOSFET Transistor AOD4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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