AOD4106
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD4106
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 642
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO252
AOD4106
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD4106
Datasheet (PDF)
..1. Size:138K aosemi
aod4106.pdf 
AOD4106N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4106 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), low gate charge.This device is ID = 50A (VGS = 20V)suitable for use as a low side switch in SMPS and RDS(ON)
8.1. Size:238K aosemi
aod410.pdf
AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
8.2. Size:291K aosemi
aod4102.pdf
AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
8.3. Size:116K aosemi
aod4100.pdf
AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)
8.4. Size:114K aosemi
aod4104.pdf
AOD4104N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4104 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 75A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)
8.5. Size:841K cn vbsemi
aod410.pdf
AOD410www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT
8.6. Size:265K inchange semiconductor
aod4102.pdf
isc N-Channel MOSFET Transistor AOD4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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