AOD4106 Datasheet and Replacement
Type Designator: AOD4106
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 642 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
AOD4106 substitution
AOD4106 Datasheet (PDF)
aod4106.pdf

AOD4106N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4106 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), low gate charge.This device is ID = 50A (VGS = 20V)suitable for use as a low side switch in SMPS and RDS(ON)
aod410.pdf

AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
aod4102.pdf

AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
aod4100.pdf

AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)
Datasheet: AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , 8N60 , AOD4110 , AOD4112 , AOI1N60L , AOI472A , AOI518 , AOK18N65L , AOK20N60L , AOK20S60L .
History: CEU83A3G | STU12L01 | CEU73A3G
Keywords - AOD4106 MOSFET datasheet
AOD4106 cross reference
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History: CEU83A3G | STU12L01 | CEU73A3G



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