AOI1N60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI1N60L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 14.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Paquete / Cubierta: TO251A
Búsqueda de reemplazo de AOI1N60L MOSFET
AOI1N60L Datasheet (PDF)
aoi1n60l.pdf

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aoi1n60.pdf

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aoi1n60.pdf

isc N-Channel MOSFET Transistor AOI1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Otros transistores... AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , 2SK3918 , AOI472A , AOI518 , AOK18N65L , AOK20N60L , AOK20S60L , AOK22N50L , AOK27S60L , AOK42S60L .
History: GP2M002A060XG | SI7682DP | CJAC110N03
History: GP2M002A060XG | SI7682DP | CJAC110N03



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