AOI1N60L Todos los transistores

 

AOI1N60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOI1N60L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.7 nS

Cossⓘ - Capacitancia de salida: 14.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm

Encapsulados: TO251A

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AOI1N60L datasheet

 ..1. Size:344K  aosemi
 aoi1n60l.pdf pdf_icon

AOI1N60L

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.1. Size:344K  aosemi
 aoi1n60.pdf pdf_icon

AOI1N60L

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.2. Size:1393K  aosemi
 aod1n60 aou1n60 aoi1n60.pdf pdf_icon

AOI1N60L

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.3. Size:274K  inchange semiconductor
 aoi1n60.pdf pdf_icon

AOI1N60L

isc N-Channel MOSFET Transistor AOI1N60 FEATURES Drain Current I =1.3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

MOSTRAR MÁS

Otros transistores... AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , EMB04N03H , AOI472A , AOI518 , AOK18N65L , AOK20N60L , AOK20S60L , AOK22N50L , AOK27S60L , AOK42S60L .

History: IRF8306M | APTC80H29SCTG | 2SK1695

 

 

 

 

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