All MOSFET. AOI1N60L Datasheet

 

AOI1N60L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOI1N60L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6.7 nS

Drain-Source Capacitance (Cd): 14.5 pF

Maximum Drain-Source On-State Resistance (Rds): 9 Ohm

Package: TO251A

AOI1N60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI1N60L Datasheet (PDF)

1.1. aoi1n60l.pdf Size:344K _aosemi

AOI1N60L
AOI1N60L

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

3.1. aoi1n60.pdf Size:344K _aosemi

AOI1N60L
AOI1N60L

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

 

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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