All MOSFET. AOI1N60L Datasheet

 

AOI1N60L Datasheet and Replacement


   Type Designator: AOI1N60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 14.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO251A
 

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AOI1N60L Datasheet (PDF)

 ..1. Size:344K  aosemi
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AOI1N60L

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.1. Size:344K  aosemi
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AOI1N60L

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.2. Size:274K  inchange semiconductor
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AOI1N60L

isc N-Channel MOSFET Transistor AOI1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , AO3407 , AOI472A , AOI518 , AOK18N65L , AOK20N60L , AOK20S60L , AOK22N50L , AOK27S60L , AOK42S60L .

History: SI4N65 | 2SK3857TK | 45N06 | AP03N70I | FDS89141 | 2SK3818 | 2SK3819

Keywords - AOI1N60L MOSFET datasheet

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