All MOSFET. AOI1N60L Datasheet

 

AOI1N60L Datasheet and Replacement


   Type Designator: AOI1N60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 14.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO251A
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AOI1N60L Datasheet (PDF)

 ..1. Size:344K  aosemi
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AOI1N60L

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.1. Size:344K  aosemi
 aoi1n60.pdf pdf_icon

AOI1N60L

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 7.2. Size:274K  inchange semiconductor
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AOI1N60L

isc N-Channel MOSFET Transistor AOI1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FIR9N65LG | DMNH10H028SCT | WML11N80M3 | AP04N60S-H-HF | 2SK4075B | APT10035LFLL | IRLS4030

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