AOD414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 85A (VGS = 10V)and body diode characteristics. This device is ideallyRDS(ON)

AOD414www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

AOD4146/AOI414630V N-Channel MOSFETTMSDMOSGeneral Description Product Summary30VThe AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55Atrench technology that combines excellent RDS(ON) with lowgate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOD4144N-Channel SDMOSTM Power TransistorGeneral Description FeaturesThe AOD4144 is fabricated with SDMOSTM trench VDS (V) =30Vtechnology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V)ID = 55Acontrolled switching behavior. This universal technology (VGS = 10V)RDS(ON)

AOD4144www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

isc N-Channel MOSFET Transistor AOD4146FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose