AOD414 PDF and Equivalents Search

 ..1. Size:447K  aosemi
 aod414.pdf

AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity ID = 85A (VGS = 10V) and body diode characteristics. This device is ideally RDS(ON) ... See More ⇒

 ..2. Size:838K  cn vbsemi
 aod414.pdf

AOD414 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLU... See More ⇒

 0.1. Size:358K  aosemi
 aod4146.pdf

AOD4146/AOI4146 30V N-Channel MOSFET TM SDMOS General Description Product Summary 30V The AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V) ... See More ⇒

 0.2. Size:163K  aosemi
 aod4144.pdf

AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench VDS (V) =30V technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with (VGS = 10V) ID = 55A controlled switching behavior. This universal technology (VGS = 10V) RDS(ON) ... See More ⇒

 0.3. Size:898K  cn vbsemi
 aod4144.pdf

AOD4144 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT... See More ⇒

 0.4. Size:266K  inchange semiconductor
 aod4146.pdf

isc N-Channel MOSFET Transistor AOD4146 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒