2SK3224 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3224
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 165 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO251

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2SK3224 Datasheet (PDF)

..1. Size:354K inchange semiconductor
2sk3224.pdf

isc N-Channel MOSFET Transistor 2SK3224FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

0.1. Size:256K renesas
2sk3224-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. Size:948K kexin
2sk3224-z.pdf

SMD Type MOSFETN-Channel MOSFET2SK3224-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features +0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 60m (VGS = 4V) Low Ciss : Ciss = 790 pF TYP.+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.15Drain2 Drain3 So

0.3. Size:287K inchange semiconductor
2sk3224-z.pdf

isc N-Channel MOSFET Transistor 2SK3224-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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