Справочник MOSFET. 2SK3224

 

2SK3224 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3224
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 25 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 165 ns
   Выходная емкость (Cd): 240 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: TO251

 Аналог (замена) для 2SK3224

 

 

2SK3224 Datasheet (PDF)

 ..1. Size:354K  inchange semiconductor
 2sk3224.pdf

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isc N-Channel MOSFET Transistor 2SK3224FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

 0.1. Size:256K  renesas
 2sk3224-z.pdf

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:948K  kexin
 2sk3224-z.pdf

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SMD Type MOSFETN-Channel MOSFET2SK3224-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features +0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 60m (VGS = 4V) Low Ciss : Ciss = 790 pF TYP.+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.15Drain2 Drain3 So

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 2sk3224-z.pdf

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isc N-Channel MOSFET Transistor 2SK3224-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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