All MOSFET. 2SK3224 Datasheet

 

2SK3224 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3224

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 165 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO251

2SK3224 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3224 Datasheet (PDF)

1.1. 2sk3224-z.pdf Size:256K _update

2SK3224
2SK3224

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sk3224-z.pdf Size:948K _kexin

2SK3224
2SK3224

SMD Type MOSFET N-Channel MOSFET 2SK3224-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) < 40mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 60mΩ (VGS = 4V) ● Low Ciss : Ciss = 790 pF TYP. + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 Drain 2 Drain 3 So

4.1. 2sk3221.pdf Size:230K _update

2SK3224
2SK3224

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk3225-z.pdf Size:266K _update

2SK3224
2SK3224

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.3. 2sk3228.pdf Size:87K _renesas

2SK3224
2SK3224

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m? typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15, 2006 page

4.4. rej03g1094 2sk3228ds.pdf Size:101K _renesas

2SK3224
2SK3224

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. 2sk3229.pdf Size:53K _renesas

2SK3224
2SK3224

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m? typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Rev.2.0

4.6. 2sk322.pdf Size:29K _hitachi

2SK3224
2SK3224

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Gate to drain voltage VGDO 15 V Gate to source voltage VGSO 15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 C Storage tem

4.7. 2sk3225.pdf Size:1697K _kexin

2SK3224
2SK3224

SMD Type MOSFET N-Channel MOSFET 2SK3225 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features ● VDS (V) = 60V 4 ● ID = 34 A (VGS = 10V) ● RDS(ON) < 18mΩ (VGS = 10V) 0.127 0.80+0.1 max -0.1 ● RDS(ON) < 27mΩ (VGS = 4V) ● Low input capacitance Ciss = 2100 pF TYP 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.6

Datasheet: 2SK2089 , 2SK319 , 2SK3192 , 2SK320 , 2SK3203L , 2SK3203S , 2SK3219-01MR , 2SK3221 , IRFP4232 , 2SK3225-Z , 2SK1008 , 2SK1008-01 , 2SK1009-01 , 2SK1010-01 , 2SK1572 , 2SK1574 , 2SK1590C .

 


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