2SK1662M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1662M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 83 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm
Encapsulados: TO220F
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2SK1662M datasheet
2sk1662.pdf
isc N-Channel MOSFET Transistor 2SK1662 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX
2sk1669.pdf
2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code PRSS
2sk1668.pdf
2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM)
Otros transistores... 2SK1601, 2SK1602, 2SK1603, 2SK160A, 2SK1626, 2SK1627, 2SK1629-E1-E, 2SK1660, IRFZ24N, 2SK1681, 2SK1683, 2SK2180, 2SK2182, 2SK2183, 2SK2185, 2SK2186, 2SK2188
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