2SK1662M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1662M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS

tonⓘ - Tiempo de encendido: 83 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm

Encapsulados: TO220F

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2SK1662M datasheet

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2SK1662M

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2SK1662M

isc N-Channel MOSFET Transistor 2SK1662 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

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2SK1662M

2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code PRSS

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2SK1662M

2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM)

Otros transistores... 2SK1601, 2SK1602, 2SK1603, 2SK160A, 2SK1626, 2SK1627, 2SK1629-E1-E, 2SK1660, IRFZ24N, 2SK1681, 2SK1683, 2SK2180, 2SK2182, 2SK2183, 2SK2185, 2SK2186, 2SK2188