Справочник MOSFET. 2SK1662M

 

2SK1662M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1662M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   tonⓘ - Время включения: 83 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK1662M

 

 

2SK1662M Datasheet (PDF)

 ..1. Size:87K  no
2sk1662m.pdf

2SK1662M

 7.1. Size:209K  inchange semiconductor
2sk1662.pdf

2SK1662M
2SK1662M

isc N-Channel MOSFET Transistor 2SK1662DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.1. Size:82K  renesas
2sk1669.pdf

2SK1662M
2SK1662M

2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous: ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code: PRSS

 8.2. Size:81K  renesas
2sk1668.pdf

2SK1662M
2SK1662M

2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous: ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)

 8.3. Size:80K  renesas
2sk1667.pdf

2SK1662M
2SK1662M

2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 (Previous: ADE-208-1308) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

 8.4. Size:443K  nec
2sk1664.pdf

2SK1662M
2SK1662M

 8.5. Size:214K  inchange semiconductor
2sk1667.pdf

2SK1662M
2SK1662M

isc N-Channel MOSFET Transistor 2SK1667DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable for switchingregulator,

 8.6. Size:63K  inchange semiconductor
2sk1660.pdf

2SK1662M
2SK1662M

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1660 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD

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