2SK1662M Datasheet. Specs and Replacement
Type Designator: 2SK1662M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Id| ⓘ - Maximum Drain Current: 3 A
Electrical Characteristics
ton ⓘ - Turn-on Time: 83 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO220F
2SK1662M substitution
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2SK1662M datasheet
2sk1662.pdf
isc N-Channel MOSFET Transistor 2SK1662 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX... See More ⇒
2sk1669.pdf
2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code PRSS... See More ⇒
2sk1668.pdf
2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) ... See More ⇒
Detailed specifications: 2SK1601, 2SK1602, 2SK1603, 2SK160A, 2SK1626, 2SK1627, 2SK1629-E1-E, 2SK1660, IRFZ24N, 2SK1681, 2SK1683, 2SK2180, 2SK2182, 2SK2183, 2SK2185, 2SK2186, 2SK2188
Keywords - 2SK1662M MOSFET specs
2SK1662M cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1660
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