2SK2665 Todos los transistores

 

2SK2665 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2665
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   tonⓘ - Tiempo de encendido: 40 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.7 Ohm
   Paquete / Cubierta: TO263
 

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2SK2665 Datasheet (PDF)

 ..1. Size:271K  shindengen
2sk2665 f3s90hvx2.pdf pdf_icon

2SK2665

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2665Case : STO-220(Unit : mm)( F3S90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply

 8.1. Size:385K  toshiba
2sk2661.pdf pdf_icon

2SK2665

2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2

 8.2. Size:414K  toshiba
2sk2662.pdf pdf_icon

2SK2665

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

 8.3. Size:23K  panasonic
2sk2660.pdf pdf_icon

2SK2665

Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin

Otros transistores... 2SK1347 , 2SK1348 , 2SK1349 , 2SK1350 , 2SK1351 , 2SK1352 , 2SK1357 , 2SK2664 , IRF4905 , 2SK2666 , 2SK2667 , 2SK2669 , 2SK2670 , 2SK2672 , 2SK2673 , 2SK2676 , 2SK2677 .

History: DMC2400UV | DMN90H8D5HCT | AM8814 | TPCA8109 | AP85T03GS-HF | 2SK1671 | AON6912A

 

 
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