2SK2665
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2665
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
tonⓘ - Turn-on Time: 40
nS
Cossⓘ -
Output Capacitance: 67
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7
Ohm
Package:
TO263
2SK2665
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2665
Datasheet (PDF)
..1. Size:271K shindengen
2sk2665 f3s90hvx2.pdf 
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2665Case : STO-220(Unit : mm)( F3S90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
8.1. Size:385K toshiba
2sk2661.pdf
2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2
8.2. Size:414K toshiba
2sk2662.pdf
2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
8.3. Size:23K panasonic
2sk2660.pdf
Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin
8.5. Size:254K no
2sk2666.pdf
SHINDENGEN N- NEDI MENSI ONSOUTLI2SK2666Case : FTO-220Unit:mmF3F90HVX900V 3A(Ciss)
8.6. Size:336K shindengen
2sk2663.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2663Case : E-pack( F1E90HVX2 )(Unit : mm)900V 1AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 240V inputHi
8.7. Size:430K shindengen
2sk2667.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2667Case : MTO-3P(Unit : mm)( F3W90HVX2 )900V 3AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC
8.8. Size:272K shindengen
2sk2664 f3v90hvx2.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2664Case : TO-220(Unit : mm)( F3V90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
8.9. Size:413K shenzhen
2sk2669.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2669Case : TO-220(Unit : mm)( F5V90HVX2 )900V 5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
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