2SK3573 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3573
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 83 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220AB

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2SK3573 Datasheet (PDF)

..1. Size:43K kexin
2sk3573.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3573TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)+0.10.1max1.27-0.1Low gate chargeQG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount d

..2. Size:289K inchange semiconductor
2sk3573.pdf

isc N-Channel MOSFET Transistor 2SK3573FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:74K nec
2sk3573-s-z-zk.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3573SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3573 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3573 TO-220ABdesigned for low voltage high current applications such as2SK3573-S TO-262DC/DC converter with synchronous

0.2. Size:283K inchange semiconductor
2sk3573-s.pdf

isc N-Channel MOSFET Transistor 2SK3573-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.3. Size:357K inchange semiconductor
2sk3573-z.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.4. Size:357K inchange semiconductor
2sk3573-zk.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZKFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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