2SK3573 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3573 Datasheet (PDF)

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SMD Type MOSFETMOS Field Effect Transistor2SK3573TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)+0.10.1max1.27-0.1Low gate chargeQG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount d

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isc N-Channel MOSFET Transistor 2SK3573FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3573SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3573 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3573 TO-220ABdesigned for low voltage high current applications such as2SK3573-S TO-262DC/DC converter with synchronous

0.2. Size:283K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3573-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi