2SK3573
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3573
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 105
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 68
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 1550
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO220AB
2SK3573
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3573
Datasheet (PDF)
..1. Size:43K kexin
2sk3573.pdf 
SMD Type MOSFETMOS Field Effect Transistor2SK3573TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)+0.10.1max1.27-0.1Low gate chargeQG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount d
..2. Size:289K inchange semiconductor
2sk3573.pdf
isc N-Channel MOSFET Transistor 2SK3573FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.1. Size:74K nec
2sk3573-s-z-zk.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3573SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3573 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3573 TO-220ABdesigned for low voltage high current applications such as2SK3573-S TO-262DC/DC converter with synchronous
0.2. Size:283K inchange semiconductor
2sk3573-s.pdf
isc N-Channel MOSFET Transistor 2SK3573-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.3. Size:357K inchange semiconductor
2sk3573-z.pdf
isc N-Channel MOSFET Transistor 2SK3573-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.4. Size:357K inchange semiconductor
2sk3573-zk.pdf
isc N-Channel MOSFET Transistor 2SK3573-ZKFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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