Справочник MOSFET. 2SK3573

 

2SK3573 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3573
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 105 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 83 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 1550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SK3573

 

 

2SK3573 Datasheet (PDF)

 ..1. Size:43K  kexin
 2sk3573.pdf

2SK3573

SMD Type MOSFETMOS Field Effect Transistor2SK3573TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)+0.10.1max1.27-0.1Low gate chargeQG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount d

 ..2. Size:289K  inchange semiconductor
 2sk3573.pdf

2SK3573 2SK3573

isc N-Channel MOSFET Transistor 2SK3573FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.1. Size:74K  nec
 2sk3573-s-z-zk.pdf

2SK3573 2SK3573

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3573SWITCHINGN-CHANNEL POWER MOS FET ORDERING INFORMATIONDESCRIPTION The 2SK3573 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3573 TO-220ABdesigned for low voltage high current applications such as2SK3573-S TO-262DC/DC converter with synchronous

 0.2. Size:283K  inchange semiconductor
 2sk3573-s.pdf

2SK3573 2SK3573

isc N-Channel MOSFET Transistor 2SK3573-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 0.3. Size:357K  inchange semiconductor
 2sk3573-z.pdf

2SK3573 2SK3573

isc N-Channel MOSFET Transistor 2SK3573-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 0.4. Size:357K  inchange semiconductor
 2sk3573-zk.pdf

2SK3573 2SK3573

isc N-Channel MOSFET Transistor 2SK3573-ZKFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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