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2SK3574 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3574
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: TO220AB
 

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2SK3574 Datasheet (PDF)

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2SK3574

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3574SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent switching2SK3574 TO-220ABcharacteristics, designed for low voltage high current2SK3574-S TO-262applications such as DC/DC converter with synchronous2S

 ..2. Size:43K  kexin
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2SK3574

SMD Type MOSFETMOS Field Effect Transistor2SK3574TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A)+0.10.1max1.27-0.1Low gate chargeQG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount

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2SK3574

isc N-Channel MOSFET Transistor 2SK3574FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.1. Size:357K  inchange semiconductor
2sk3574-z.pdf pdf_icon

2SK3574

isc N-Channel MOSFET Transistor 2SK3574-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... 2SK356 , 2SK3570 , 2SK3571 , 2SK3572 , 2SK3573 , 2SK3573-S , 2SK3573-Z , 2SK3573-ZK , IRLB4132 , 2SK3575 , 2SK3575-S , 2SK3575-Z , 2SK3575-ZK , 2SK3576 , 2SK3577 , 2SK358 , 2SK4178-ZK .

History: 2SK3812-ZP | SIHFI9530G | STL11N4LLF5

 

 
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