2SK3574
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3574
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 29
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 245
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135
Ohm
Package:
TO220AB
2SK3574
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3574
Datasheet (PDF)
..1. Size:86K 1
2sk3574 2sk3574-s 2sk3574-z 2sk3574-zk.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3574SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent switching2SK3574 TO-220ABcharacteristics, designed for low voltage high current2SK3574-S TO-262applications such as DC/DC converter with synchronous2S
..2. Size:43K kexin
2sk3574.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3574TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A)+0.10.1max1.27-0.1Low gate chargeQG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount
..3. Size:289K inchange semiconductor
2sk3574.pdf
isc N-Channel MOSFET Transistor 2SK3574FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.1. Size:357K inchange semiconductor
2sk3574-z.pdf
isc N-Channel MOSFET Transistor 2SK3574-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.2. Size:357K inchange semiconductor
2sk3574-zk.pdf
isc N-Channel MOSFET Transistor 2SK3574-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
0.3. Size:283K inchange semiconductor
2sk3574-s.pdf
isc N-Channel MOSFET Transistor 2SK3574-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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