Справочник MOSFET. 2SK3574

 

2SK3574 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3574
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 245 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SK3574

 

 

2SK3574 Datasheet (PDF)

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 2sk3574 2sk3574-s 2sk3574-z 2sk3574-zk.pdf

2SK3574 2SK3574

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3574SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent switching2SK3574 TO-220ABcharacteristics, designed for low voltage high current2SK3574-S TO-262applications such as DC/DC converter with synchronous2S

 ..2. Size:43K  kexin
 2sk3574.pdf

2SK3574

SMD Type MOSFETMOS Field Effect Transistor2SK3574TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.14.5V drive available.Low on-state resistance,RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A)+0.10.1max1.27-0.1Low gate chargeQG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A)+0.10.81-0.1Built-in gate protection diode2.541Gate+0.22.54-0.2 +0.1 +0.2Surface mount

 ..3. Size:289K  inchange semiconductor
 2sk3574.pdf

2SK3574 2SK3574

isc N-Channel MOSFET Transistor 2SK3574FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.1. Size:357K  inchange semiconductor
 2sk3574-z.pdf

2SK3574 2SK3574

isc N-Channel MOSFET Transistor 2SK3574-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.2. Size:357K  inchange semiconductor
 2sk3574-zk.pdf

2SK3574 2SK3574

isc N-Channel MOSFET Transistor 2SK3574-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 0.3. Size:283K  inchange semiconductor
 2sk3574-s.pdf

2SK3574 2SK3574

isc N-Channel MOSFET Transistor 2SK3574-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 

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