IRF9530 Todos los transistores

 

IRF9530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9530

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 88 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 38 nC

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO220AB

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IRF9530 Datasheet (PDF)

1.1. irf9530smd.pdf Size:22K _upd-mosfet

IRF9530
IRF9530

IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS ! VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS

1.2. irf9530-220m.pdf Size:520K _upd-mosfet

IRF9530
IRF9530

≥ θ θ ≤ ≤ μ ≤ ≤ Ω ≤ μ ≤ Ω μ ≥ Ʊ μ Ω ≤ ≤ μ μ 4.83 (0.190) 10.92 (0.430) 5.33 (0.210) 10.41 (0.410) 0.64 (0.025) 0.89 (0.035) 3.56 (0.140)Dia 3.81 (0.150) 1 2 3 0.89 (0.035)Dia. 1.27 (0.050) 2.54 (0.100) 3.05 (0.120) BSC BSC TO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13

 1.3. irf9530spbf.pdf Size:196K _upd-mosfet

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) ()VGS = - 10 V 0.30 • Available in Tape and Reel Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 6.8 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 21 • 175 °C Operating Temperature Config

1.4. irf9530s.pdf Size:170K _upd-mosfet

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) ()VGS = - 10 V 0.30 • Available in Tape and Reel Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 6.8 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 21 • 175 °C Operating Temperature Config

 1.5. irf9530nspbf.pdf Size:761K _upd-mosfet

IRF9530
IRF9530

PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

1.6. irf9530pbf.pdf Size:203K _upd-mosfet

IRF9530
IRF9530

IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = - 10 V 0.30 • P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 6.8 • Fast Switching Qgd (nC) 21 • Ease of Paralleling Configuration Single • Simple Drive Requir

1.7. irf9530npbf.pdf Size:225K _upd-mosfet

IRF9530
IRF9530

 IRF9530NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175°C Operating Temperature l Fast Switching DS(on) Ω l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description

1.8. irf9530.pdf Size:173K _international_rectifier

IRF9530
IRF9530

1.9. irf9530n.pdf Size:113K _international_rectifier

IRF9530
IRF9530

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.20? P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.10. irf9530spbf.pdf Size:1028K _international_rectifier

IRF9530
IRF9530

PD- 95988 IRF9530SPbF Lead-Free 06/06/05 Document Number: 91077 www.vishay.com 1 IRF9530SPbF Document Number: 91077 www.vishay.com 2 IRF9530SPbF Document Number: 91077 www.vishay.com 3 IRF9530SPbF Document Number: 91077 www.vishay.com 4 IRF9530SPbF Document Number: 91077 www.vishay.com 5 IRF9530SPbF Document Number: 91077 www.vishay.com 6 IRF9530SPbF Peak Diode Recove

1.11. irf9530s.pdf Size:176K _international_rectifier

IRF9530
IRF9530

1.12. irf9530ns.pdf Size:173K _international_rectifier

IRF9530
IRF9530

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.13. irf9530-31-32-33.pdf Size:449K _international_rectifier

IRF9530
IRF9530

1.14. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

IRF9530
IRF9530



1.15. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

IRF9530
IRF9530



1.16. irf9530s sihf9530s.pdf Size:171K _vishay

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) (?)VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Configuration Single Fa

1.17. irf9530 sihf9530.pdf Size:202K _vishay

IRF9530
IRF9530

IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

1.18. irf9530 rf1s9530sm.pdf Size:68K _intersil

IRF9530
IRF9530

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs • 12A, 100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.300Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

1.19. irf9530.pdf Size:1236K _kexin

IRF9530
IRF9530

DIP Type MOSFET P-Channel MOSFET IRF9530 (KRF9530) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) =-100V ● ID =-13 A (VGS =-10V) ● RDS(ON) < 205mΩ (VGS =-10V) 1.27 ± 0.10 1.52 ± 0.10 2 ● RDS(ON) < 300mΩ (VGS =-4.5V) 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54TYP [2.54 ± 0.20 ] [2.54 ± 0.2

Otros transistores... IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 , IRF9523 , APT50M38JFLL , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 .

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