All MOSFET. IRF9530 Datasheet

 

IRF9530 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9530

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO220AB

IRF9530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9530 Datasheet (PDF)

1.1. irf9530spbf.pdf Size:196K _upd-mosfet

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) ()VGS = - 10 V 0.30 • Available in Tape and Reel Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 6.8 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 21 • 175 °C Operating Temperature Config

1.2. irf9530-220m.pdf Size:520K _upd-mosfet

IRF9530
IRF9530

≥ θ θ ≤ ≤ μ ≤ ≤ Ω ≤ μ ≤ Ω μ ≥ Ʊ μ Ω ≤ ≤ μ μ 4.83 (0.190) 10.92 (0.430) 5.33 (0.210) 10.41 (0.410) 0.64 (0.025) 0.89 (0.035) 3.56 (0.140)Dia 3.81 (0.150) 1 2 3 0.89 (0.035)Dia. 1.27 (0.050) 2.54 (0.100) 3.05 (0.120) BSC BSC TO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13

 1.3. irf9530pbf.pdf Size:203K _upd-mosfet

IRF9530
IRF9530

IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = - 10 V 0.30 • P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 6.8 • Fast Switching Qgd (nC) 21 • Ease of Paralleling Configuration Single • Simple Drive Requir

1.4. irf9530smd.pdf Size:22K _upd-mosfet

IRF9530
IRF9530

IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS ! VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS

 1.5. irf9530npbf.pdf Size:225K _upd-mosfet

IRF9530
IRF9530

 IRF9530NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175°C Operating Temperature l Fast Switching DS(on) Ω l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description

1.6. irf9530nspbf.pdf Size:761K _upd-mosfet

IRF9530
IRF9530

PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

1.7. irf9530s.pdf Size:170K _upd-mosfet

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) ()VGS = - 10 V 0.30 • Available in Tape and Reel Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 6.8 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 21 • 175 °C Operating Temperature Config

1.8. irf9530spbf.pdf Size:1028K _international_rectifier

IRF9530
IRF9530

PD- 95988 IRF9530SPbF Lead-Free 06/06/05 Document Number: 91077 www.vishay.com 1 IRF9530SPbF Document Number: 91077 www.vishay.com 2 IRF9530SPbF Document Number: 91077 www.vishay.com 3 IRF9530SPbF Document Number: 91077 www.vishay.com 4 IRF9530SPbF Document Number: 91077 www.vishay.com 5 IRF9530SPbF Document Number: 91077 www.vishay.com 6 IRF9530SPbF Peak Diode Recove

1.9. irf9530-31-32-33.pdf Size:449K _international_rectifier

IRF9530
IRF9530

1.10. irf9530n.pdf Size:113K _international_rectifier

IRF9530
IRF9530

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.20? P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.11. irf9530s.pdf Size:176K _international_rectifier

IRF9530
IRF9530

1.12. irf9530.pdf Size:173K _international_rectifier

IRF9530
IRF9530

1.13. irf9530ns.pdf Size:173K _international_rectifier

IRF9530
IRF9530

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.14. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

IRF9530
IRF9530



1.15. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

IRF9530
IRF9530



1.16. irf9530s sihf9530s.pdf Size:171K _vishay

IRF9530
IRF9530

IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) (?)VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Configuration Single Fa

1.17. irf9530 sihf9530.pdf Size:202K _vishay

IRF9530
IRF9530

IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

1.18. irf9530 rf1s9530sm.pdf Size:68K _intersil

IRF9530
IRF9530

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs • 12A, 100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.300Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

1.19. irf9530n.pdf Size:241K _inchange_semiconductor

IRF9530
IRF9530

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia

1.20. irf9530pbf.pdf Size:241K _inchange_semiconductor

IRF9530
IRF9530

isc P-Channel MOSFET Transistor IRF9530PBF ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Power management in notebook computer ·Portable equipment and battery powered systems ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

1.21. irf9530s.pdf Size:232K _inchange_semiconductor

IRF9530
IRF9530

INCHANGE Semiconductor isc P-Channel Mosfet Transistor IRF9530S FEATURES ·-12A,-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: R =0.3Ω(Max) DS(on) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·The

1.22. irf9530.pdf Size:234K _inchange_semiconductor

IRF9530
IRF9530

INCHANGE Semiconductor isc P-Channel Mosfet Transistor IRF9530 FEATURES ·-12A,-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: R =0.3Ω(Max) DS(on) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·The

1.23. irf9530.pdf Size:1236K _kexin

IRF9530
IRF9530

DIP Type MOSFET P-Channel MOSFET IRF9530 (KRF9530) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) =-100V ● ID =-13 A (VGS =-10V) ● RDS(ON) < 205mΩ (VGS =-10V) 1.27 ± 0.10 1.52 ± 0.10 2 ● RDS(ON) < 300mΩ (VGS =-4.5V) 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54TYP [2.54 ± 0.20 ] [2.54 ± 0.2

Datasheet: IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 , IRF9523 , APT50M38JFLL , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 .

 

 
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