IRF9530 datasheet, аналоги, основные параметры
Наименование производителя: IRF9530 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 52 ns
Cossⓘ - Выходная емкость: 340 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220AB
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Аналог (замена) для IRF9530
- подборⓘ MOSFET транзистора по параметрам
IRF9530 даташит
..3. Size:202K vishay
irf9530 sihf9530.pdf 
IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requir
..4. Size:203K vishay
irf9530pbf sihf9530.pdf 
IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.30 P-Channel RoHS* Qg (Max.) (nC) 38 COMPLIANT 175 C Operating Temperature Qgs (nC) 6.8 Fast Switching Qgd (nC) 21 Ease of Paralleling Configuration Single Simple Drive Requir
..5. Size:68K intersil
irf9530 rf1s9530sm.pdf 
IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs 12A, 100V These are P-Channel enhancement mode silicon gate rDS(ON) = 0.300 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
..6. Size:1236K kexin
irf9530.pdf 
DIP Type MOSFET P-Channel MOSFET IRF9530 (KRF9530) TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) =-100V ID =-13 A (VGS =-10V) RDS(ON) 205m (VGS =-10V) 1.27 0.10 1.52 0.10 2 RDS(ON) 300m (VGS =-4.5V) 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.2
..7. Size:241K inchange semiconductor
irf9530pbf.pdf 
isc P-Channel MOSFET Transistor IRF9530PBF FEATURES Static drain-source on-resistance RDS(on) 0.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power management in notebook computer Portable equipment and battery powered systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
..8. Size:234K inchange semiconductor
irf9530.pdf 
INCHANGE Semiconductor isc P-Channel Mosfet Transistor IRF9530 FEATURES -12A -100V Single pulse avalanche energy rated Static Drain-Source On-Resistance R =0.3 (Max) DS(on) SOA is power dissipation limited Nanosecond switching speeds Linear transfer characteristics Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION The
0.1. Size:225K international rectifier
irf9530npbf.pdf 
IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description
0.2. Size:173K international rectifier
irf9530ns.pdf 
PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi
0.3. Size:1028K international rectifier
irf9530spbf.pdf 
PD- 95988 IRF9530SPbF Lead-Free 06/06/05 Document Number 91077 www.vishay.com 1 IRF9530SPbF Document Number 91077 www.vishay.com 2 IRF9530SPbF Document Number 91077 www.vishay.com 3 IRF9530SPbF Document Number 91077 www.vishay.com 4 IRF9530SPbF Document Number 91077 www.vishay.com 5 IRF9530SPbF Document Number 91077 www.vishay.com 6 IRF9530SPbF Peak Diode R
0.4. Size:113K international rectifier
irf9530n.pdf 
PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are
0.6. Size:761K international rectifier
irf9530nspbf.pdf 
PD- 95439 IRF9530NSPbF IRF9530NLPbF Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS
0.9. Size:171K vishay
irf9530s sihf9530s.pdf 
IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Config
0.10. Size:196K vishay
irf9530spbf sihf9530s.pdf 
IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Config
0.11. Size:170K vishay
irf9530s.pdf 
IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 6.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 21 175 C Operating Temperature Config
0.12. Size:817K infineon
irf9530nspbf irf9530nlpbf.pdf 
IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175 C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In
0.13. Size:520K semelab
irf9530-220m.pdf 
4.83 (0.190) 10.92 (0.430) 5.33 (0.210) 10.41 (0.410) 0.64 (0.025) 0.89 (0.035) 3.56 (0.140)Dia 3.81 (0.150) 1 2 3 0.89 (0.035)Dia. 1.27 (0.050) 2.54 (0.100) 3.05 (0.120) BSC BSC TO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13
0.14. Size:22K semelab
irf9530smd.pdf 
IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET FOR HI REL APPLICATIONS ! VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS
0.15. Size:1531K cn vbsemi
irf9530npbf.pdf 
IRF9530NPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Swi
0.16. Size:1457K cn vbsemi
irf9530p.pdf 
IRF9530P www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Switch
0.17. Size:241K inchange semiconductor
irf9530n.pdf 
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia
0.18. Size:232K inchange semiconductor
irf9530s.pdf 
INCHANGE Semiconductor isc P-Channel Mosfet Transistor IRF9530S FEATURES -12A -100V Single pulse avalanche energy rated Static Drain-Source On-Resistance R =0.3 (Max) DS(on) SOA is power dissipation limited Nanosecond switching speeds Linear transfer characteristics Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION The
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