IRF9540N Todos los transistores

PD - 94790A IRF9540NPbF Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185)

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extr

PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive ap

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150

PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175 C Operating Temperature RDS(on) = 0.117 l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t

Silicon P-Channel Power MOSFET Description The IRF9540NS uses advanced technology and design to provide excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =-110V, I =-35A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Schematic diagram Application Power switching application