All MOSFET. IRF9540N Datasheet

 

IRF9540N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9540N

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 64.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.117 Ohm

Package: TO220AB

IRF9540N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9540N Datasheet (PDF)

0.1. irf9540n.pdf Size:125K _international_rectifier

IRF9540N
IRF9540N

PD - 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

0.2. irf9540npbf.pdf Size:922K _international_rectifier

IRF9540N
IRF9540N

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

 0.3. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier

IRF9540N
IRF9540N

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

0.4. irf9540ns.pdf Size:286K _international_rectifier

IRF9540N
IRF9540N

PD - 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t

 0.5. irf9540npbf.pdf Size:922K _infineon

IRF9540N
IRF9540N

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

0.6. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon

IRF9540N
IRF9540N

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

0.7. irf9540n.pdf Size:273K _inchange_semiconductor

IRF9540N
IRF9540N

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr

Datasheet: IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 .

 

 
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