IRF9540N MOSFET PDF: P-Ch, 100V, 23A. Datasheet. Full specification with pinout and replacement list

IRF9540N Specs and Replacement

The IRF9540N is a P-channel power MOSFET designed for high-efficiency switching and load control in DC applications. Built with advanced HEXFET technology, it offers low on-resistance - typically around 0.117Ohm - which reduces conduction losses and heat generation. Its drain-source voltage rating of 100V and continuous drain current capability of 23A make it suitable for medium- to high-power circuits. The device features fast switching speed, enabling efficient operation in converters, motor drivers, power-management systems. A maximum gate-source voltage of 20V allows compatibility with common control logic, while the TO220 package ensures good thermal performance and straightforward heat-sinking. The IRF9540N's rugged avalanche characteristics and reliable MOSFET structure provide stability under transient loads, making it a dependable choice for power electronics designers.

   Type Designator: IRF9540N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TO220AB

IRF9540N substitution

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IRF9540N datasheet

..1. Size:922K international rectifier
irf9540npbf.pdf pdf_icon

PD - 94790A IRF9540NPbF Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) ... See More ⇒

..2. Size:125K international rectifier
irf9540n.pdf pdf_icon

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

..3. Size:273K inchange semiconductor
irf9540n.pdf pdf_icon

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extr... See More ⇒

0.1. Size:823K international rectifier
auirf9540n.pdf pdf_icon

PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive ap... See More ⇒