2SK556 Todos los transistores

 ..1. Size:251K  hitachi
 2sk556 2sk557.pdf

 ..2. Size:231K  inchange semiconductor
 2sk556.pdf

isc N-Channel MOSFET Transistor 2SK556 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

 9.1. Size:247K  hitachi
 2sk554 2sk555.pdf

 9.2. Size:521K  hitachi
 2sk55.pdf

 9.3. Size:248K  hitachi
 2sk552 2sk553.pdf

 9.4. Size:184K  no
 2sk559 2sk560.pdf

 9.5. Size:236K  inchange semiconductor
 2sk557.pdf

isc N-Channel MOSFET Transistor 2SK557 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

 9.6. Size:239K  inchange semiconductor
 2sk559.pdf

isc N-Channel MOSFET Transistor 2SK559 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies