All MOSFET. 2SK556 Datasheet

 

2SK556 Datasheet and Replacement


   Type Designator: 2SK556
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO3P
 

 2SK556 substitution

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2SK556 Datasheet (PDF)

 ..1. Size:251K  hitachi
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2SK556

 ..2. Size:231K  inchange semiconductor
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2SK556

isc N-Channel MOSFET Transistor 2SK556DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.1. Size:247K  hitachi
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2SK556

 9.2. Size:521K  hitachi
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2SK556

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Datasheet: 2SK4092 , 2SK4094-1E , 2SK4096LS-1E , 2SK529 , 2SK552 , 2SK553 , 2SK554 , 2SK555 , IRFZ24N , 2SK557 , 2SK565 , 2SK568 , 2SK596S-B , 2SK528 , 2SK735 , 2SK738-Z , 2SK762 .

Keywords - 2SK556 MOSFET datasheet

 2SK556 cross reference
 2SK556 equivalent finder
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