2SK556 PDF and Equivalents Search

 

2SK556 Specs and Replacement

Type Designator: 2SK556

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO3P

2SK556 substitution

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2SK556 datasheet

 ..1. Size:251K  hitachi
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2SK556

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 ..2. Size:231K  inchange semiconductor
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2SK556

isc N-Channel MOSFET Transistor 2SK556 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies... See More ⇒

 9.1. Size:247K  hitachi
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2SK556

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 9.2. Size:521K  hitachi
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2SK556

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Detailed specifications: 2SK4092, 2SK4094-1E, 2SK4096LS-1E, 2SK529, 2SK552, 2SK553, 2SK554, 2SK555, TK10A60D, 2SK557, 2SK565, 2SK568, 2SK596S-B, 2SK528, 2SK735, 2SK738-Z, 2SK762

Keywords - 2SK556 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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