2SK3386 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK3386FEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3386-ZFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (VDS = 30 V) Enhancement mode: Vth = 2.0 t

2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3388 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 82 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement mode: Vth = 1.5 t

2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSV) 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 (typ.) High forward transfer admittance: Yfs = 17 S (typ.) Low leakage current: IDSS = 100 A (VDS = 150 V) Enhancement m

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3385www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

isc N-Channel MOSFET Transistor 2SK3385-ZFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3385FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr