2SK3386 Specs and Replacement

Type Designator: 2SK3386

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 310 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO251

2SK3386 substitution

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2SK3386 datasheet

 ..1. Size:355K  inchange semiconductor
2sk3386.pdf pdf_icon

2SK3386

isc N-Channel MOSFET Transistor 2SK3386 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

 0.1. Size:234K  renesas
2sk3386-z.pdf pdf_icon

2SK3386

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:287K  inchange semiconductor
2sk3386-z.pdf pdf_icon

2SK3386

isc N-Channel MOSFET Transistor 2SK3386-Z FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.1. Size:188K  toshiba
2sk3389.pdf pdf_icon

2SK3386

2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 3.8 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (VDS = 30 V) Enhancement mode Vth = 2.0 t... See More ⇒

Detailed specifications: 2SK3366, 2SK3366-Z, 2SK3367, 2SK3367-Z, 2SK3377, 2SK3377-Z, 2SK3385, 2SK3385-Z, 20N60, 2SK3386-Z, 2SK4143-S17-AY, 2SK4144, 2SK4144-AZ, 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147

Keywords - 2SK3386 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.