2SK3386. Аналоги и основные параметры
Наименование производителя: 2SK3386
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 34 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 310 ns
Cossⓘ - Выходная емкость: 340 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
Тип корпуса: TO251
Аналог (замена) для 2SK3386
- подборⓘ MOSFET транзистора по параметрам
2SK3386 даташит
2sk3386.pdf
isc N-Channel MOSFET Transistor 2SK3386 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
2sk3386-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3386-z.pdf
isc N-Channel MOSFET Transistor 2SK3386-Z FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
2sk3389.pdf
2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 3.8 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (VDS = 30 V) Enhancement mode Vth = 2.0 t
Другие IGBT... 2SK3366, 2SK3366-Z, 2SK3367, 2SK3367-Z, 2SK3377, 2SK3377-Z, 2SK3385, 2SK3385-Z, 20N60, 2SK3386-Z, 2SK4143-S17-AY, 2SK4144, 2SK4144-AZ, 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147
History: 2SK3367 | AOTL66811 | AP9971AGH-HF | AP9971AGS-HF
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Список транзисторов
Обновления
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