2SK1040 Todos los transistores

 

2SK1040 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1040

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1 Ohm

Empaquetado / Estuche: TO3PF

Búsqueda de reemplazo de MOSFET 2SK1040

 

2SK1040 Datasheet (PDF)

1.1. 2sk1040.pdf Size:58K _update

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2SK1040

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1040 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Voltag

5.1. 2sk1063.pdf Size:44K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

5.2. 2sk1032 2sk1032a.pdf Size:69K _update

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 5.3. 2sk1074.pdf Size:62K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta

5.4. 2sk1006-01m.pdf Size:127K _update

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 5.5. 2sk1001.pdf Size:125K _update

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5.6. 2sk1015.pdf Size:63K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage ±30 V G

5.7. 2sk1012-01.pdf Size:169K _update

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5.8. 2sk1017-01.pdf Size:138K _update

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5.9. 2sk1064.pdf Size:44K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

5.10. 2sk1059-z.pdf Size:277K _update

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5.11. 2sk1022.pdf Size:60K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat

5.12. 2sk1008-01.pdf Size:133K _update

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5.13. 2sk1024-01.pdf Size:160K _update

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5.14. 2sk1009-01.pdf Size:167K _update

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5.15. 2sk1018.pdf Size:57K _update

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5.16. 2sk1007.pdf Size:61K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

5.17. 2sk1006.pdf Size:73K _update

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5.18. 2sk1039.pdf Size:61K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

5.19. 2sk1010-01.pdf Size:167K _update

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5.20. 2sk1060-z.pdf Size:299K _update

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5.21. 2sk1030 2sk1030a.pdf Size:64K _update

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5.22. 2sk1021.pdf Size:57K _update

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查询2SK1021供应商

5.23. 2sk1089.pdf Size:183K _update

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N-channel MOS-FET 2SK1089 F-III Series 60V 0,035Ω 35A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C),

5.24. 2sk1011-01.pdf Size:134K _update

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5.25. 2sk1005.pdf Size:73K _update

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5.26. 2sk1038.pdf Size:61K _update

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

5.27. 2sk1079.pdf Size:69K _update

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Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003

5.28. 2sk1016-01.pdf Size:176K _update

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5.29. 2sk1020.pdf Size:170K _update

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5.30. 2sk1023-01.pdf Size:166K _update

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5.31. 2sk1004.pdf Size:73K _update

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5.32. 2sk1008.pdf Size:265K _update

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION ·Drain Current –I =4.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo

5.33. 2sk1014-01.pdf Size:254K _update

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FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee ± Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings

5.34. 2sk1015-01.pdf Size:173K _update

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5.35. 2sk1061.pdf Size:293K _toshiba

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2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 0.6 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SJ

5.36. 2sk1062.pdf Size:333K _toshiba

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2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit: mm Analog Switching Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = 50 mA D • Low on resistance: R = 0.6 ? (typ.) @ I = 50 mA DS (ON) D • Enhancement

5.37. 2sk1078.pdf Size:371K _toshiba2

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5.38. 2sk1052.pdf Size:104K _sanyo

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Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parame

5.39. 2sk1068.pdf Size:94K _sanyo

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Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit:mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65 0.9 2.0

5.40. 2sk1067.pdf Size:143K _sanyo

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Ordering number:EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit:mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to be made

5.41. 2sk1066.pdf Size:302K _sanyo

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Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit:mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large ? yfs? . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmall-sized packag

5.42. 2sk1069.pdf Size:98K _sanyo

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Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit:mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBET proc

5.43. 2sk1065.pdf Size:42K _sanyo

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Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit:mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Drain 3 : Source SANYO : MCP Specification

5.44. 2sk1053.pdf Size:106K _sanyo

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Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parame

5.45. 2sk1070.pdf Size:84K _renesas

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 Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous: REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application  Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage

5.46. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.47. 2sk1060.pdf Size:302K _nec

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5.48. 2sk1059.pdf Size:280K _nec

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5.49. 2sk1033.pdf Size:34K _panasonic

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Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on) = 0.45?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf =180ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor drive 2.54

5.50. 2sk1036.pdf Size:33K _panasonic

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Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.23?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 80ns(typ) No secondary breakdown o3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.25 5.08 0.5

5.51. 2sk1035.pdf Size:35K _panasonic

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Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.2?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 100ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor drive 2.54

5.52. 2sk1082.pdf Size:1246K _fuji

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5.53. 2sk1098-m.pdf Size:178K _fuji

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N-channel MOS-FET 2SK1098-M F-III Series 150V 0,5? 6A 30W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless

5.54. 2sk1096-mr.pdf Size:140K _fuji

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5.55. 2sk1016.pdf Size:1624K _fuji

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5.56. 2sk1081-01.pdf Size:165K _fuji

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5.57. 2sk1082-01.pdf Size:163K _fuji

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5.58. 2sk1099.pdf Size:60K _fuji

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5.59. 2sk1086.pdf Size:143K _fuji

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5.60. 2sk1093.pdf Size:20K _hitachi

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2SK1093 Silicon N-Channel MOS FET Application TO220FM High speed power switching Features Low on-resistance 2 1 High speed switching 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Sy

5.61. 2sk1058.pdf Size:55K _hitachi

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.62. 2sk1094.pdf Size:19K _hitachi

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2SK1094 Silicon N-Channel MOS FET Application TO220FM High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Sym

5.63. 2sk1095.pdf Size:19K _hitachi

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2SK1095 Silicon N-Channel MOS FET Application TO220FM High speed power switching Features Low on-resistance 2 1 2 High speed switching 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Sy

5.64. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi

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2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057

5.65. 2sk1057.pdf Size:55K _hitachi

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.66. 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf Size:48K _no

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5.67. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet

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Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

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