2SK1040 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1040
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO3PF
Búsqueda de reemplazo de 2SK1040 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1040 datasheet
2sk1040.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1040 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Voltag
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk1007-01.pdf
FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi
2sk1006-01mr.pdf
FUJI POWER MOSFET 2SK1006-01MR N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220F15 Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators 2.54 UPS DC-DC converters 3. Source General purpose power amplifier JEDEC SC-67 EIAJ Equivalent circuit schematic Max
2sk1017.pdf
FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and
2sk1019.pdf
FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co
2sk1079.pdf
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2sk1061.pdf
2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2
2sk1078.pdf
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2sk1062.pdf
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit mm Analog Switching Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme
2sk1066.pdf
Ordering number EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large yfs . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmal
2sk1065.pdf
Ordering number ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3 Source SANYO MCP Specific
2sk1067.pdf
Ordering number EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to
2sk1053.pdf
Ordering number EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C
2sk1052.pdf
Ordering number EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C
2sk1068.pdf
Ordering number EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65
2sk1069.pdf
Ordering number EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBE
rej03g0906 2sk1056 2sk1057 2sk1058.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1070.pdf
Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application Low frequency / High frequency amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage
2sk1033.pdf
Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf =180ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Mot
2sk1036.pdf
Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.23 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 80ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.
2sk1035.pdf
Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.2 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 100ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor
2sk1089.pdf
N-channel MOS-FET 2SK1089 F-III Series 60V 0,035 35A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),
2sk1098-m.pdf
N-channel MOS-FET 2SK1098-M F-III Series 150V 0,5 6A 30W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),
2sk1085-m.pdf
N-channel MOS-FET 2SK1085-M F-III Series 150V 0,9 3A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),
2sk1014-01.pdf
FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings
2sk1056 2sk1057 2sk1058.pdf
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2sk1093.pdf
2SK1093 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 High speed switching 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta
2sk1057 2sk1058.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk1094.pdf
2SK1094 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta
2sk1095.pdf
2SK1095 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 2 High speed switching 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta
2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf
Databook.fxp 1/14/99 2 03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = 1.0 A 20 50 30 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain
2sk1022.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat
2sk1007.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL
2sk1099.pdf
isc N-Channel MOSFET Transistor 2SK1099 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
2sk1020.pdf
isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol
2sk1014.pdf
isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
2sk1064.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f
2sk1018.pdf
isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
2sk1093.pdf
isc N-Channel MOSFET Transistor 2SK1093 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
2sk1011.pdf
isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G
2sk1081.pdf
isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8
2sk1010.pdf
isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
2sk1017.pdf
isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS
2sk1029.pdf
isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
2sk1085-m.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1085-M FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sk1024.pdf
isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra
2sk1016.pdf
isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
2sk1074.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION Drain Current ID=3A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta
2sk1053.pdf
isc N-Channel MOSFET Transistor 2SK1053 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela
2sk1013.pdf
isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G
2sk1082.pdf
isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9
2sk1094.pdf
isc N-Channel MOSFET Transistor 2SK1094 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
2sk1052.pdf
isc N-Channel MOSFET Transistor 2SK1052 DESCRIPTION Drain Current I =0.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and re
2sk1073.pdf
isc N-Channel MOSFET Transistor 2SK1073 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8
2sk1008.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo
2sk1039.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta
2sk1021.pdf
isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta
2sk1095.pdf
isc N-Channel MOSFET Transistor 2SK1095 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sk1009.pdf
isc N-Channel MOSFET Transistor 2SK1009 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS
2sk1015.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V G
2sk1012.pdf
isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G
2sk1038.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta
2sk1019.pdf
isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS
2sk1063.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f
Otros transistores... 2SK448, 2SK484, 2SK490, 2SK1030A, 2SK1032, 2SK1032A, 2SK1038, 2SK1039, 7N65, 2SK1059-Z, 2SK1060-Z, 2SK1063, 2SK1064, 2SK2320, 2SK2328, 2SK2329S, 2SK2407
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