2SK1040 Specs and Replacement
Type Designator: 2SK1040
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO3PF
2SK1040 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1040 datasheet
2sk1040.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1040 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Voltag... See More ⇒
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
... See More ⇒
2sk1007-01.pdf
FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi... See More ⇒
2sk1006-01mr.pdf
FUJI POWER MOSFET 2SK1006-01MR N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220F15 Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators 2.54 UPS DC-DC converters 3. Source General purpose power amplifier JEDEC SC-67 EIAJ Equivalent circuit schematic Max... See More ⇒
2sk1017.pdf
FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and... See More ⇒
2sk1019.pdf
FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co... See More ⇒
2sk1079.pdf
Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒
2sk1061.pdf
2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2... See More ⇒
2sk1078.pdf
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... See More ⇒
2sk1062.pdf
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit mm Analog Switching Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme... See More ⇒
2sk1066.pdf
Ordering number EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large yfs . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmal... See More ⇒
2sk1065.pdf
Ordering number ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3 Source SANYO MCP Specific... See More ⇒
2sk1067.pdf
Ordering number EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to ... See More ⇒
2sk1053.pdf
Ordering number EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒
2sk1052.pdf
Ordering number EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 Gate 0.8 0.4 2 Drain 1 2 3 3 Source EIAJ SC-46 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒
2sk1068.pdf
Ordering number EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65 ... See More ⇒
2sk1069.pdf
Ordering number EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBE... See More ⇒
rej03g0906 2sk1056 2sk1057 2sk1058.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk1070.pdf
Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application Low frequency / High frequency amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage ... See More ⇒
2sk1033.pdf
Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf =180ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Mot... See More ⇒
2sk1036.pdf
Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.23 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 80ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.... See More ⇒
2sk1035.pdf
Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.2 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 100ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor... See More ⇒
2sk1089.pdf
N-channel MOS-FET 2SK1089 F-III Series 60V 0,035 35A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), ... See More ⇒
2sk1098-m.pdf
N-channel MOS-FET 2SK1098-M F-III Series 150V 0,5 6A 30W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), ... See More ⇒
2sk1085-m.pdf
N-channel MOS-FET 2SK1085-M F-III Series 150V 0,9 3A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), ... See More ⇒
2sk1014-01.pdf
FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings ... See More ⇒
2sk1056 2sk1057 2sk1058.pdf
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier ... See More ⇒
2sk1093.pdf
2SK1093 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 High speed switching 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta... See More ⇒
2sk1057 2sk1058.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
2sk1094.pdf
2SK1094 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta ... See More ⇒
2sk1095.pdf
2SK1095 Silicon N-Channel MOS FET Application TO 220FM High speed power switching Features Low on-resistance 2 1 2 High speed switching 3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta... See More ⇒
2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf
Databook.fxp 1/14/99 2 03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = 1.0 A 20 50 30 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )... See More ⇒
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒
2sk1022.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat... See More ⇒
2sk1007.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL ... See More ⇒
2sk1099.pdf
isc N-Channel MOSFET Transistor 2SK1099 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) ... See More ⇒
2sk1020.pdf
isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
2sk1014.pdf
isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS... See More ⇒
2sk1064.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f... See More ⇒
2sk1018.pdf
isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS... See More ⇒
2sk1093.pdf
isc N-Channel MOSFET Transistor 2SK1093 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
2sk1011.pdf
isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G... See More ⇒
2sk1081.pdf
isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8... See More ⇒
2sk1010.pdf
isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) ... See More ⇒
2sk1017.pdf
isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS... See More ⇒
2sk1029.pdf
isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
2sk1085-m.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1085-M FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
2sk1024.pdf
isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
2sk1016.pdf
isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS... See More ⇒
2sk1074.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION Drain Current ID=3A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta... See More ⇒
2sk1053.pdf
isc N-Channel MOSFET Transistor 2SK1053 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela... See More ⇒
2sk1013.pdf
isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G... See More ⇒
2sk1082.pdf
isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9... See More ⇒
2sk1094.pdf
isc N-Channel MOSFET Transistor 2SK1094 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
2sk1052.pdf
isc N-Channel MOSFET Transistor 2SK1052 DESCRIPTION Drain Current I =0.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and re... See More ⇒
2sk1073.pdf
isc N-Channel MOSFET Transistor 2SK1073 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8... See More ⇒
2sk1008.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
2sk1039.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta... See More ⇒
2sk1021.pdf
isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
2sk1095.pdf
isc N-Channel MOSFET Transistor 2SK1095 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
2sk1009.pdf
isc N-Channel MOSFET Transistor 2SK1009 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS... See More ⇒
2sk1015.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V G... See More ⇒
2sk1012.pdf
isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G... See More ⇒
2sk1038.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta... See More ⇒
2sk1019.pdf
isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS... See More ⇒
2sk1063.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f... See More ⇒
Detailed specifications: 2SK448, 2SK484, 2SK490, 2SK1030A, 2SK1032, 2SK1032A, 2SK1038, 2SK1039, 7N65, 2SK1059-Z, 2SK1060-Z, 2SK1063, 2SK1064, 2SK2320, 2SK2328, 2SK2329S, 2SK2407
Keywords - 2SK1040 MOSFET specs
2SK1040 cross reference
2SK1040 equivalent finder
2SK1040 pdf lookup
2SK1040 substitution
2SK1040 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
